Reliability of electron devices, failure physics and analysisGROESENEKEN, Guido; MAES, Herman E; MOUTHAAN, Anton J et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, issn 0026-2714, 352 p.Conference Proceedings

AC effects in IC reliabilityHU, C.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1611-1617, issn 0026-2714Conference Paper

Copper interconnection lines : SARF characterization and lifetime testCIOFI, C; DATTILO, V; NERI, B et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1747-1750, issn 0026-2714Conference Paper

Designing circuits and processes to optimize performance and reliability : Metallurgy meets TCADTHOMPSON, C. V; KNOWLTON, B. D.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1683-1690, issn 0026-2714Conference Paper

Question marks to the extrapolation to lower temperatures in high temperature storage life (HSTL) testing in plastic encapsulated IC'sSCHUDDEBOOM, W; WÜBBENHORST, M.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1935-1938, issn 0026-2714Conference Paper

A new wafer level reliability method for evaluation of ionic induced pMOSFET drift effectsDREIZNER, A; NAGEL, J; SCHARFE, R et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1855-1858, issn 0026-2714Conference Paper

A practical system for hot spot detection using fluorescent microthermal imagingGLACET, J.-Y; BERNE, S.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1811-1814, issn 0026-2714Conference Paper

Comprehensive gate-oxide reliability evaluation for DRAM processesVOLLERSTEN, R. P; ABADEER, W. W.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1631-1638, issn 0026-2714Conference Paper

Characterisation of chip-on-board and flip chip packaging technologies by acoustic microscopyLAWTON, W; BARRETT, J.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1803-1806, issn 0026-2714Conference Paper

ESD protection to overcome internal gate-oxide damage on digital-analog interface of mixed-mode CMOS IC'sKER, M.-D; YU, T.-L.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1727-1730, issn 0026-2714Conference Paper

Efficient output ESD protection for 0.5-μm high-speed CMOS SRAM IC with well-coupled techniqueKER, M.-D; WU, C.-N.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1731-1734, issn 0026-2714Conference Paper

Finite element investigations of mechanical stress in metallization structuresWEIDE, K; YU, X; MENHORN, F et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1703-1706, issn 0026-2714Conference Paper

Oxide breakdown decrease by oxide growth projection of implantation-caused stacking faults : A characterization case study using atomic force microscopyJACOB, P; HOEPPNER, K.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1783-1786, issn 0026-2714Conference Paper

Wafer level reliability : Process control for reliabilityTURNER, T. E.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1839-1846, issn 0026-2714Conference Paper

Wafer level measurement system for SARF characterization of metal linesCIOFI, C; DE MARINIS, M; NERI, B et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1851-1854, issn 0026-2714Conference Paper

A new method to determine the influence of thermomechanical stress on the reliability of metal lines in integrated circuitsGLASOW, A. V; KAMMER, H; KOHLHASE, A et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1755-1758, issn 0026-2714Conference Paper

Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT'sMENEGHESSO, G; HADDAB, Y; PERRINO, N et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1895-1898, issn 0026-2714Conference Paper

Electric field dependence of TDDB activation energy in ultrathin oxidesVINCENT, E; REVIL, N; PAPADAS, C et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1643-1646, issn 0026-2714Conference Paper

Evaluation of structural degradation in packaged semiconductor components using a transient thermal characterisation techniqueCHRISTIAENS, F; VANDEVELDE, B; BEYNE, E et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1807-1810, issn 0026-2714Conference Paper

Hot-carrier reliability of n- and p- channel MOSFETS with polysilicon and CVD tungsten-polycide gateLOU, C. L; CHIM, W. K; CHAN, D. S. H et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1663-1666, issn 0026-2714Conference Paper

Introduction of plastic encapsulated devices in systems operating under severe temperature conditionsHERNANDEZ, R; LE PEUCH, O; PARMENTIER, B et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1943-1946, issn 0026-2714Conference Paper

Method for precise determination of the statistical distribution of the input offset voltage of differential stagesTHEWES, R; SCHINDHELM, T; TIEBOUT, M et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1823-1826, issn 0026-2714Conference Paper

Nanoscopic evaluation of semiconductor properties by scanning probe microscopiesBALK, L. J; HEIDERHOFF, R; KOSCHINSKI, P et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1767-1774, issn 0026-2714Conference Paper

A new statistical model for fitting bimodal oxide breakdown distributions at different field conditionsDEGRAEVE, R; ROUSSEL, P; OGIER, J. L et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1651-1654, issn 0026-2714Conference Paper

Enhancement of t_bd of MOS gate oxides with a single-step pre-stress prior to a CVS in the Fowler-Nordheim regimeMARTIN, A; RIBBROCK, T; O'SULLIVAN, P et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1647-1650, issn 0026-2714Conference Paper